Part Number Hot Search : 
32024 1A353 15Q7Q LT3740 MAC210A6 HCU04 T88952B ADT6503
Product Description
Full Text Search
 

To Download CGH35030F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Type : 440166 PN: CGH3503 0F
Typical Performance Over 3.3-3.7GHz
Parameter Small Signal Gain EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 10.9 1.9 20.8 11.4 11.1 1.9 20.8 8.2
(TC = 25C)
of Demonstration Amplifier
3.6 GHz 10.7 2.0 22.7 4.0 3.7 GHz 10.8 2.0 23.9 3.7 Units dB % % dB
3.4 GHz
3.5 GHz 10.9 1.9 21.6 5.3
Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
* * * *
2007 Rev .4 - May
3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM
* *
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1
Symbol VDSS VGS TSTG TJ TS RJC
Rating 84 -10, +2 -55, +150 175 245 3.7
Units Volts Volts C C C C/W
Note: 1 Measured for the CGH35030F at 14 W PDISS
Electrical Characteristics (TC = 25C)
Characteristics DC Characteristics
4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature Screw Torque RF Characteristics Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance
2,3
VGS(th) VGS(Q) IDS VBR gm TC T
-3.6 - 4.8 84 1200 -10 -
-2.5 -2.6 5.4 100 1300 -
- - - - +105 60
VDC VDC A VDC mS C in-oz
VDS = 10 V, ID = 7.2 mA VDS = 28 V, ID = 120 mA VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 7.2 mA VDS = 28 V, ID = 2 A
Reference 440166 Package Revision 3
(TC = 25C, F0 = 3.6 GHz unless otherwise noted) GSS
10.0 20.0 - - -
10.7 22.5 2.3 2.0 TBD
- - - -
dB % %
VDD = 28 V, IDQ = 120 mA VDD = 28 V, IDQ = 120 mA, PAVE = 4 W VDD = 28 V, IDQ = 120 mA, PAVE = 21 dBm VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
EVM1 EVM2 VSWR
Y
No damage at all phase angles, VDD = 28 V, IDQ = 120 mA
CGS CDS CGD
- - -
9.3 2.0 0.9
- - -
pF pF pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 2
Drain Efficiency = POUT / PDC Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Measured in the CGH35030F test fixture. Measured on wafer prior to packaging.
Type RS-CC, Coding Rate Type 2/3.
3 4
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
2
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical WiMAX Performance
Typical EVM and Efficiency at 21 dBm and 36 dBm vs Frequency of CGH35030F in Broadband Amplifier Circuit
3.5 28
3.0
24
2.5
20
EVM (%)
2.0
16
1.5 EVM @ 21dBm 1.0 EVM @ 36dBm Efficiency 0.5
12
8
4
0.0 3.3 3.4 3.5 3.6 3.7
0
Frequency (GHz)
Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Gain and Return Loss vs Frequency of CGH35030F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 120 mA, OFDM BW = 3.5 MHz
15 13 11 9 7 8 6 4 2 0 S21 S11 -2 -4 -6 -8 -10 -12 -14 -16 3.0 3.2 3.4 3.6 3.8 4.0 4.2
Gain (dB)
5 3 1 -1 -3 -5 -7 -9
Frequency (GHz)
Input Return Loss (dB)
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
3
CGH35030F Rev .4 Preliminary
Drain Efficiency (%)
CGH35030F-TB Demonstration Amplifier Circuit Schematic
CGH35030F-TB Demonstration Amplifier Circuit Outline
3-000538 REV1
CGH35030-TB
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
4
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials
Designator R1 R2 C6 C17 C16 C8 C13 C1 C2,C9,C10 C4,C11 C5,C12 C7,C14 J3,J4 J2 J1 Q1
Description RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.05pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF, 0805,100V, X7R CONN SMA STR PANEL JACK RECP HEADER RT>PLZ.1CEN LK 2 POS HEADER RT>PLZ .1CEN LK 5POS CGH35030F
Qty 1 1 1 1 1 1 1 1 3 2 2 2 1 1 1 1
CGH35030F-TB Demonstration Amplifier Circuit
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
5
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Source and Load Impedances
D Z Source G Z Load
S
Frequency (MHz) 3300 3400 3500 3600 3700
1
Z Source 5.3 - j8.9 6.7 - j8.6 7.7 - j9.3 7.5 - j10.5 6.3 - j11.0
Z Load 13.3 - j10.0 12.1 - j8.9 11.0 - j7.8 10.2 - j6.6 9.5 - j5.5
Note : VDD = 28V, IDQ = 120mA. In the 440166 package. Note2: Impedances are extracted from the CGH35030-TB demonstration circuit and are not source and load pull data off the transistors itself.
Product Dimensions CGH35030F (Package Type -- 440166)
PRELIMINARY
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
6
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical Package S-Parameters (Small Signal, VDS = 28 V, IDQ = 120 mA, magnitude / angle)
Frequency 200 MHz 300 MHz 400 MHz 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz 3.8 GHz 3.9 GHz 4.0 GHz
Mag S 0.9207 0.9136 0.9108 0.9095 0.9087 0.9083 0.9080 0.9079 0.9078 0.9077 0.9077 0.9077 0.9077 0.9078 0.9078 0.9079 0.9079 0.9080 0.9080 0.9081 0.9082 0.9082 0.9083 0.9083 0.9084 0.9084 0.9084 0.9084 0.9085 0.9085 0.9085 0.9084 0.9084 0.9084 0.9083 0.9082 0.9082 0.9081 0.9079
Ang S -135.03 -150.21 -158.59 -164.02 -167.91 -170.90 -173.33 -175.38 -177.16 -178.76 179.80 178.46 177.20 176.01 174.88 173.79 172.73 171.70 170.70 169.71 168.74 167.78 166.83 165.89 164.95 164.01 163.08 162.14 161.21 160.27 159.33 158.38 157.43 156.48 155.51 154.54 153.56 152.58 151.58
Mag S2 16.412 11.402 8.683 6.998 5.855 5.032 4.410 3.925 3.536 3.218 2.952 2.727 2.533 2.366 2.220 2.091 1.976 1.874 1.781 1.698 1.623 1.554 1.491 1.433 1.380 1.330 1.285 1.243 1.203 1.167 1.133 1.101 1.071 1.043 1.016 0.991 0.968 0.946 0.926
Ang S2 108.79 100.13 94.76 90.82 87.61 84.84 82.33 80.01 77.82 75.72 73.69 71.72 69.80 67.91 66.05 64.22 62.41 60.62 58.84 57.09 55.34 53.60 51.88 50.17 48.46 46.76 45.07 43.39 41.72 40.04 38.38 36.72 35.63 33.41 31.76 30.12 28.47 26.83 25.19
Mag S2 0.02981 0.03104 0.03149 0.03169 0.03177 0.03180 0.03180 0.03177 0.03172 0.03167 0.03160 0.03152 0.03143 0.03134 0.03124 0.03114 0.03102 0.03091 0.03079 0.03066 0.03053 0.03040 0.03027 0.03013 0.02999 0.02985 0.02971 0.02956 0.02942 0.02928 0.02914 0.02900 0.02886 0.02872 0.02859 0.02846 0.02834 0.02822 0.02811
Ang S2 20.50 12.71 8.20 5.12 2.77 0.86 -0.77 -2.22 -3.53 -4.75 -5.88 -6.96 -7.98 -8.96 -9.90 -10.80 -11.68 -12.52 -13.34 -14.14 -14.91 -15.65 -16.38 -17.07 -17.75 -18.40 -19.03 -19.64 -20.22 -20.78 -21.32 -21.83 -22.31 -22.77 -23.21 -23.62 -24.01 -24.37 -24.70
Mag S22 0.6269 0.6531 0.6633 0.6685 0.6716 0.6737 0.6754 0.6769 0.6782 0.6794 0.6807 0.6819 0.6832 0.6845 0.6858 0.6871 0.6885 0.6899 0.6914 0.6928 0.6943 0.6958 0.6974 0.6989 0.7005 0.7020 0.7036 0.7052 0.7067 0.7083 0.7099 0.7114 0.7129 0.7144 0.7159 0.7173 0.7188 0.7202 0.7215
Ang S22 -156.01 -164.20 -168.67 -171.56 -173.62 -175.22 -176.52 -177.62 -178.58 -179.45 179.76 179.01 178.31 177.64 176.99 176.35 175.73 175.11 174.50 173.89 173.28 172.67 172.06 171.45 170.83 170.20 169.57 168.92 168.27 167.61 166.94 166.26 165.58 164.87 164.16 163.44 162.70 161.95 161.19
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
7
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639
Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
8
CGH35030F Rev .4 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless


▲Up To Search▲   

 
Price & Availability of CGH35030F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X